Semiconductor device and module

A semiconductor device comprising:

• a semiconductor substrate having first and second main surfaces opposing each other in a thickness direction, first and second end surfaces opposing each other in a length direction orthogonal to the thickness direction, and first and second side surfaces opposing each other in a width direction orthogonal to the thickness direction and the length direction;
• and
• a circuit layer disposed on the first main surface of the semiconductor substrate and including:
• a first electrode layer disposed on a side of the semiconductor substrate,
• a dielectric layer disposed on the first electrode layer,
• a second electrode layer disposed on the dielectric layer,
• a first outer electrode electrically connected to the first electrode layer and extending in the thickness direction to a surface of the circuit layer, and
• a second outer electrode electrically connected to the second electrode layer and extending in the thickness direction to the surface of the circuit layer,
• wherein, in a plan view of the circuit layer, the first electrode layer has a first facing portion that overlaps the second electrode layer in the thickness direction and a first non-facing portion that does not overlap the second electrode layer in the thickness direction, the second electrode layer has a second facing portion that overlaps the first electrode layer in the thickness direction and a second non-facing portion that does not overlap the first electrode layer in the thickness direction, the first outer electrode is disposed on a side of the second end surface of the semiconductor substrate relative to the second outer electrode, and a center of gravity of the first electrode layer is located on the side of the second end surface relative to a center of gravity of the second electrode layer, and
• wherein a ratio P1 of an area of the first electrode layer to a second electrode layer non-formation region that is a region of the semiconductor substrate on the side of the second end surface relative to an end portion of the second facing portion on the side of the second end surface is between 80% and 100%.