Array type semiconductor laser device

An array type semiconductor laser device comprising:

• a semiconductor laser array element in which a first semiconductor laser element and a second semiconductor laser element are disposed on a substrate,
• wherein the first semiconductor laser element includes a first one conductivity type semiconductor layer and a first other conductivity type semiconductor layer, the first one conductivity type semiconductor layer being closer to the substrate than the first other conductivity type semiconductor layer is to the substrate,
• the second semiconductor laser element includes a second one conductivity type semiconductor layer and a second other conductivity type semiconductor layer, the second one conductivity type semiconductor layer being closer to the substrate than the second other conductivity type semiconductor layer is to the substrate,
• the first semiconductor laser element includes a first waveguide that extends in a first direction along a surface of the substrate,
• the second semiconductor laser element is disposed, relative to the first semiconductor laser element, in a second direction along the surface of the substrate, the second direction being orthogonal to the first direction,
• the second semiconductor laser element includes a second waveguide that extends in the first direction,
• the first semiconductor laser element includes, on a first surface, a first electrode disposed on the first other conductivity type semiconductor layer, the first surface being an opposite surface of the semiconductor laser array element to the substrate,
• the second semiconductor laser element includes, on the first surface, a second electrode disposed on the second other conductivity type semiconductor layer,
• the first semiconductor laser element includes, on the first surface:
• a third electrode disposed on the first one conductivity type semiconductor layer and between the first electrode and the second electrode;
• and
• a fourth electrode disposed on the first one conductivity type semiconductor layer and across from the third electrode,
• the second semiconductor laser element includes, on the first surface:
• a fifth electrode disposed on the second one conductivity type semiconductor layer and between the second electrode and the third electrode;
• and
• a sixth electrode disposed on the second one conductivity type semiconductor layer and across from the fifth electrode, and
• the array type semiconductor laser device further comprises:
• a first conductor that electrically connects the second electrode and the third electrode;
• and
• a second conductor that electrically connects the fifth electrode and the sixth electrode.