Gallium nitride (gan) layer transfer and regrowth for integrated circuit technology

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a substrate;
• an insulator layer over the substrate;
• and
• a device layer directly on the insulator layer, the device layer comprising gallium and nitrogen and having an uppermost face consisting of gallium, and the device layer having a thickness of less than approximately 500 nanometers.

An integrated circuit structure, comprising:

• a substrate;
• an insulator layer over the substrate;
• and
• a device layer directly on the insulator layer, the device layer comprising gallium and nitrogen and having an uppermost face consisting of nitrogen, and the device layer having a thickness of less than approximately 500 nanometers.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a substrate;
• an insulator layer over the substrate;
• and
• a device layer directly on the insulator layer, the device layer comprising gallium and nitrogen and having an uppermost face consisting of nitrogen, and the device layer having a thickness of less than approximately 500 nanometers.