US 2023/0054701 A1 · NANOSHEET IC DEVICE WITH SINGLE DIFFUSION BREAK

Abstract

An approach for a nanosheet device with a single diffusion break is disclosed. The device comprises of active gate is formed above the BDI. At least the SDB is also formed over BDI with dielectric filled gate. The dielectric fill forms an indentation into the remaining nanosheets, under the spacer region, or between the inner spacers, in the SDB region. The method of creating the device comprises of, forming a gate cut opening between two ends of a dummy gate of one or more gates; forming a first sacrificial material on the gate cut opening; creating a single diffusion break; removing the dummy gate and oxide layer; removing, selectively a second sacrificial material; trimming, selectively stack of nanosheets; and forming dielectric in the gate cut opening and the single diffusion break.

Claims20

Dependent claims

A nanosheet device, the nanosheet device comprising:

a substrate comprising one or more gates, dummy oxide liner, one or more STIs (shallow trench isolation), one or more gate cuts and one or more gate spacers;
a BDI (bottom dielectric isolation) is disposed above the substrate;
one or more nanosheet devices with an active gate of the one or more gates is disposed above the BDI, wherein the one or more nanosheet devices comprises stacks of nanosheets;
a SDB (single diffusion break) is disposed over the BDI with dielectric filled gate of the one or more gates and between the one or more gate spacers;
and
the dielectric filled gate forms an indentation into the remaining nanosheet stacks of the stacks of nanosheets, under the one or more gate spacers in the single diffusion break.

3 more elements

A computer system for forming single diffusion break for nanosheet IC (integrated circuit), the computer system comprising:

one or more computer processors;
one or more computer readable storage media;
and
program instructions stored on the one or more computer readable storage media for execution by at least one of the one or more computer processors, the program instructions comprising:
program instructions to form a gate cut opening in a dummy gate of one or more gates;
program instructions to form a first sacrificial material on the gate cut opening;
program instructions to create a single diffusion break;
program instructions to remove the dummy gate and oxide layer from the dummy gate;
program instructions to remove, selectively, a second sacrificial material;
program instructions to trim, selectively, stack of nanosheets;
and
program instructions to form dielectric in the gate cut opening and the single diffusion break.

9 more elements

Dependencies are inferred from the claim text.

Nanosheet ic device with single diffusion break

Life of this patent

Nanosheet ic device with single diffusion break

Life of this patent

Abstract

Claims20