Radiofrequency Signal Filter Arrangement for Plasma Processing System

A plasma processing system, comprising:

• a primary electrode having a substantially cylindrical shape defined by a top surface, a bottom surface, and an outer side surface;
• a ceramic layer disposed on the top surface of the primary electrode, the ceramic layer configured to receive and support a semiconductor wafer;
• a radiofrequency signal generator electrically connected through an impedance matching system to the primary electrode, the radiofrequency signal generator configured to generate and supply radiofrequency signals to the primary electrode;
• an edge ring formed of an electrically conductive material and configured to circumscribe the ceramic layer, the edge ring positioned radially adjacent to the ceramic layer;
• a coupling ring coupled to a bottom surface of the edge ring, the coupling ring formed of an electrical insulator material, the coupling ring including an embedded electrode;
• a plurality of radiofrequency signal supply pins electrically and physically connected to the embedded electrode, each of the plurality of radiofrequency signal supply pins extending through a corresponding hole formed through a bottom surface of the coupling ring;
• and
• a plurality of radiofrequency signal filters respectively connected to the plurality of radiofrequency supply pins, each of the plurality of radiofrequency signal filters configured to provide a high impedance to the radiofrequency signals that are supplied to the primary electrode by the radiofrequency signal generator.