Batch type substrate processing apparatus and method of manufacturing semiconductor device using the same

A substrate processing apparatus comprising:

• a processing chamber;
• a boat configured to stack a plurality of substrates to be spaced apart from each other in a vertical direction, and configured to be moved into the processing chamber by vertical driving;
• and
• a plurality of gas supply units extending into the processing chamber from an outside of the processing chamber,
• wherein the plurality of gas supply units comprises a first gas supply unit and a second gas supply unit,
• wherein the first gas supply unit comprises a first gas inlet extending into the processing chamber from the outside of the processing chamber and having a shape including a horizontal portion and a vertical portion, a first gas nozzle on the first gas inlet, and a first adapter connecting the first gas inlet and the first gas nozzle, and
• the second gas supply unit comprises a second gas inlet extending into the processing chamber from the outside of the processing chamber and having a shape including a horizontal portion and a vertical portion, a second gas nozzle on the second gas inlet, and a second adapter connecting the second gas inlet and the second gas nozzle,
• wherein a diameter of the first gas inlet is greater than a diameter of the second gas inlet, and
• wherein the first adapter and the second adapter have different structures from each other.

A method of manufacturing a semiconductor device, comprising:

• performing a first semiconductor process on a plurality of substrates to form a first structure on each of the plurality of substrates;
• loading the plurality of substrates on which the first semiconductor process has been performed into a batch type substrate processing apparatus including a plurality of gas supply units;
• performing a second semiconductor process in which processes are repeatedly performed using the plurality of gas supply units, to form a second structure on each of the plurality of substrates;
• unloading the plurality of substrates on which the second semiconductor process has been performed from the batch type substrate processing apparatus;
• and
• performing a third semiconductor process on the plurality of substrates on which the second semiconductor process has been performed,
• wherein the batch type substrate processing apparatus comprises a processing chamber and a boat used to stack the plurality of substrates in a manner spaced apart from each other in a vertical direction, wherein the boat is moved into the processing chamber by vertical driving,
• wherein the plurality of gas supply units extend into the processing chamber from an outside of the processing chamber,
• wherein the plurality of gas supply units comprises a first gas supply unit and a second gas supply unit,
• wherein the first gas supply unit comprises a first gas inlet extending into the processing chamber from the outside of the processing chamber and having a shape including a horizontal portion and a vertical portion, a first gas nozzle on the first gas inlet, and a first adapter connecting the first gas inlet and the first gas nozzle,
• wherein the first gas nozzle comprises a first nozzle region disposed in the processing chamber and including first gas injection holes disposed to inject gas in a direction from outside the processing chamber toward the boat, and a first fastening region disposed below the first nozzle region,
• wherein the first fastening region comprises a first region, and a second region disposed on the first region and having a protruding portion protruding outwardly from an outer side surface of the first region,
• wherein the first adapter comprises a lower pedestal, a lower fastening portion disposed on the lower pedestal and contacting at least a lower surface of the protruding portion, a gasket disposed between a portion of the lower pedestal and a portion of the lower fastening portion, an upper fastening portion contacting at least an upper surface of the protruding portion, a hole passing through the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion, and a fastening unit coupling the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion through the hole, and
• wherein the performing a second semiconductor process comprises injecting a first process gas including a corrosive gas toward the plurality of substrates loaded into the processing chamber through the first gas nozzle of the first gas supply unit.