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US 2023/0054495 A1Published application
Semiconductor devices and preparation methods thereof
AssigneeChangxin Memory Technologies, Inc.
InventorZengyan Fan
Life of this patent
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Abstract
The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device comprises: a semiconductor substrate; a passivation layer, arranged on an upper surface of the semiconductor substrate; a protective layer, arranged on an upper surface of the passivation layer, a dummy opening being formed on the protective layer; and, a dummy bump, partially located in the dummy opening and closely attached to the protective layer.
Claims15
A semiconductor device, comprising:
- a semiconductor substrate;
- a passivation layer, arranged on an upper surface of the semiconductor substrate;
- a protective layer, arranged on an upper surface of the passivation layer, a dummy opening being formed on the protective layer;
- and
- a dummy bump, partially located in the dummy opening and closely adhered to the protective layer.
2 more elements
A method for preparing a semiconductor device, comprising:
- providing a semiconductor substrate, a passivation layer being formed on an upper surface of the semiconductor substrate;
- forming a protective layer on the passivation layer;
- exposing and developing the protective layer, and removing a part of the protective layer to form a dummy opening;
- forming a mask layer on the protective layer, and exposing and developing a region of the mask layer corresponding to the dummy opening to form an electroplating opening communicated with the dummy opening;
- forming a dummy bump in the electroplating opening and the dummy opening;
- and
- removing the mask layer to expose the dummy bump.
4 more elements
Dependencies are inferred from the claim text.