Etching defect detection method

Abstract

The present disclosure provides an etching defect detection method, relating to the field of semiconductor technology. The detection method includes: providing a substrate, and sequentially forming a conductive layer and a dielectric layer on the substrate; etching the dielectric layer to form a trench structure; taking the conductive layer as a cathode, and filling the trench structure with an electroplating layer by an electroplating process, to form a product to-be-detected; and testing the product to-be-detected by a defect density detection assembly, to obtain a top-view image of the trench structure, and determining an etching defect of the product to-be-detected according to the top-view image. The etching defect detection method can improve the accuracy of defect identification and prevent a capacitor from failing due to suspension.

Dependencies are inferred from the claim text.