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US 2023/0054315 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeRohm Co., Ltd.
InventorsMitsuhide KORI, Yuji MATSUMOTO
Life of this patent
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Abstract
The semiconductor device includes an Si chip which has a main surface facing a {100} plane, a trench which is formed by digging down the main surface and has an open end extending inclined in a <110> direction side with respect to a <100> direction in a plan view, and an oxide film which is constituted of an oxide of the Si chip and formed as a film on the main surface and at the open end.
Claims20
A semiconductor device comprising:
- an Si chip which has a main surface facing a {100} plane;
- a trench which is formed by digging down the main surface and has an open end extending inclined in a <110> direction side with respect to a <100> direction in a plan view;
- and
- an oxide film which is constituted of an oxide of the Si chip and formed as a film on the main surface and at the open end.
1 more element
A method for manufacturing a semiconductor device comprising:
- a step of preparing an Si wafer having a main surface that faces a {100} plane;
- a step of partially removing the main surface and forming a trench that has an open end extending inclined in a <110> direction side with respect to a <100> direction in a plan view;
- and
- a step of forming an oxide film as a film on the main surface and at the open end by an oxidation treatment method to the main surface.
1 more element
Dependencies are inferred from the claim text.