Processing method for semiconductor surface defects and preparation method for semiconductor devices
AssigneeChangxin Memory Technologies, Inc.
InventorXianghong JIANG
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Abstract
The present disclosure provides a processing method for semiconductor surface defects and a preparation method for semiconductor devices. The processing method for semiconductor surface defects includes: placing a semiconductor device in a plasma processing device, the semiconductor device comprising a semiconductor substrate and deposition layers formed on the surface of the semiconductor substrate, bubbles being formed in the deposition layers; and plasma bombarding the surface of the deposition layer to break the bubbles, so that the surface of the deposition layer is flat.
Claims17
A processing method for semiconductor surface defects, comprising:
- placing a semiconductor device in a plasma processing device, the semiconductor device comprising a semiconductor substrate and deposition layers formed on a surface of the semiconductor substrate, bubbles being formed in the deposition layers;
- and
- plasma bombarding a surface of the deposition layer to break the bubbles, so that the surface of the deposition layer is flat.
A preparation method for semiconductor devices, comprising:
- providing a semiconductor substrate;
- forming, on a surface of the semiconductor substrate, a plurality of deposition layers arranged in a stacked manner, by plasma enhanced chemical vapor deposition, bubbles being formed in the deposition layers;
- when forming the plurality of deposition layers, after plasma bombarding at least the bottommost deposition layer to break the bubbles, forming other deposition layers on a surface of the bottommost deposition layer;
- and
- patterning the plurality of deposition layers.
Dependencies are inferred from the claim text.