Semiconductor device contact pad and method of contact pad fabrication

A semiconductor device, comprising:

• a semiconductor substrate including a first side and a second side opposite the first side;
• a shallow trench isolation (STI) structure disposed within the semiconductor substrate between the first side and the second side;
• an intermetal dielectric stack coupled to the second side of the semiconductor substrate, wherein the intermetal dielectric stack includes a first metal interconnect;
• a dielectric spacer extending from at least the first side of the semiconductor substrate to the STI structure;
• and
• a contact pad laterally surrounded by the dielectric spacer, and wherein the contact pad contacts the first metal interconnect.

A semiconductor wafer, comprising:

• a plurality of dies, each die included in the plurality of dies corresponding to an instance of a semiconductor device, wherein each of the plurality of dies are separated from one another by scribe lines indicative of where to dice the semiconductor wafer, and wherein the semiconductor device includes:
• a semiconductor substrate including a first side and a second side opposite the first side, wherein the semiconductor substrate corresponds to a portion of the semiconductor wafer defined by the scribe lines;
• a shallow trench isolation (STI) structure disposed within the semiconductor substrate between the first side and the second side;
• an intermetal dielectric stack coupled to the second side of the semiconductor substrate, wherein the intermetal dielectric stack includes a first metal interconnect;
• a dielectric spacer extending from at least the first side of the semiconductor substrate to the STI structure;
• and
• a contact pad laterally surrounded by the dielectric spacer, and wherein the contact pad contacts the first metal interconnect.