Group iii nitride structures and manufacturing methods thereof
AssigneeEnkris Semiconductor, Inc.
InventorsKai CHENG, Weihua LIU
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AssigneeEnkris Semiconductor, Inc.
InventorsKai CHENG, Weihua LIU
Estimating the term…
A group-III-nitride structure and a manufacturing method thereof are provided. In the manufacturing method, one or more grooves are formed by etching a first group-III-nitride epitaxial layer with a patterned first mask layer as a mask; then a second mask layer is formed at least on one or more bottom walls of the one or more grooves, and a first epitaxial growth is performed on the first group-III-nitride epitaxial layer to laterally grow and form a second group-III-nitride epitaxial layer with the second mask layer as a mask, where the one or more grooves are filled with the second group III-nitride epitaxial layer; a second epitaxial growth is then performed on the second group-III-nitride epitaxial layer to grow and form a third group-III-nitride epitaxial layer on the second group-III-nitride epitaxial layer and the patterned first mask layer.
A method of manufacturing a group-III-nitride structure, comprising:
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A group-III-nitride structure, comprising:
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Dependencies are inferred from the claim text.