Bonding structure and manufacturing method therefor

A method for manufacturing a bonding structure, comprising:

• providing a first wafer, wherein a first hybrid bonding structure is disposed at a front surface of the first wafer, and the first hybrid bonding structure comprises a first dielectric bonding layer and a first conductive bonding pad;
• providing a second wafer, wherein a second hybrid bonding structure is disposed at a front surface of the second wafer, an interconnection structure is disposed in a layer at a side of the second hybrid bonding structure away from the front surface of the second wafer, and the second hybrid bonding structure comprises a second dielectric bonding layer and a second conductive bonding pad;
• bonding the front surface of the second wafer to the front surface of the first wafer via the first hybrid bonding structure and the second hybrid bonding structure;
• and
• forming a pad at a backside of the second wafer, wherein the pad is electrically connected to the interconnection structure, and the interconnection structure and the second conductive bonding pad do not overlap with each other when viewed from a direction perpendicular to the front surface of the second wafer.

A bonding structure, comprising:

• a first wafer segment, wherein a first hybrid bonding structure is disposed at a front surface of the first wafer segment, and the first hybrid bonding structure comprises a first dielectric bonding layer and a first conductive bonding pad;
• a second wafer segment, wherein a front surface of the second wafer segment is bonded to the front surface of the first wafer segment, a second hybrid bonding structure is disposed at the front surface of the second wafer segment, an interconnection structure is disposed in a layer at a side of the second hybrid bonding structure away from the front surface of the second wafer segment, the second hybrid bonding structure comprises a second dielectric bonding layer and a second conductive bonding pad, and the first wafer segment and the second wafer segment are bonded to each other via the first hybrid bonding structure and the second hybrid bonding structure;
• and
• a pad, which is disposed at a back surface of the second wafer segment and electrically connected to the interconnection structure, wherein the interconnection structure and the second conductive bonding pad do not overlap with each other when viewed from a direction perpendicular to the front surface of the second wafer segment.