Integrated circuit memory and the method of forming the same

Abstract

The present disclosure provides an integrated circuit memory and the method of forming the same, the memory includes: a substrate, in which a plurality of active areas arranged in an array are provided; a conducting line group, formed in the substrate, and including a plurality of conducting lines sequentially arranged along a first direction, each conducting line extending in a second direction and being connected to the corresponding active area, and ends of two adjacent conducting lines on a same side being staggered from each other in the second direction; and a plurality of contact pads, formed on the substrate, one of the contact pads being connected to an end of one conducting line, and two adjacent contact pads located on the same side being staggered in the second direction.

Dependencies are inferred from the claim text.