Silicon carbide semiconductor device and power conversion apparatus

A silicon carbide semiconductor device comprising:

• a semiconductor substrate composed of silicon carbide;
• a semiconductor layer of first conductivity type provided on the semiconductor substrate;
• a first main electrode provided on the semiconductor layer;
• a second main electrode provided on a back surface of the semiconductor substrate;
• an electric field relieving region of second conductivity type provided in an upper layer of the semiconductor layer in a terminal region outside an element region in which the main current flows;
• a first protective film provided on the semiconductor layer and covering at least a part of the electric field relieving region;
• a silicon nitride film covering an outer end portion of the first main electrode, the first protective film, and at least a part of the semiconductor layer outside the first protective film;
• and
• a second protective film provided on the silicon nitride film, wherein
• the silicon nitride film protrudes from the second protective film at both an inner side end portion and an outer side end portion.