Semiconductor memory devices with wrapped word lines

A memory device, comprising:

• a memory array comprising a plurality of memory strings laterally disposed apart from each other, a first one of the memory strings comprising:
• a first conductor structure extending along a vertical direction;
• a second conductor structure extending along the vertical direction;
• a plurality of third conductor structures each extending along a first lateral direction;
• and
• a plurality of first semiconductor films each wrapping around a corresponding one of the plurality of third conductor structures.

A method for manufacturing a semiconductor device, comprising:

• forming a first dielectric structure and second dielectric structure each extending along a lateral direction, wherein the first and second dielectric structures are separated apart from each other along a vertical direction;
• forming a third dielectric structure extending along the vertical direction and in contact with the first and second dielectric structures;
• forming a semiconductor layer extending along the lateral direction and in contact with at least a bottom surface of the first dielectric structure, a top surface of the second dielectric structure, and a sidewall of the third dielectric structure;
• forming a first conductor structure extending along the lateral direction, wherein the first conductor structure is wrapped by the semiconductor layer;
• and
• replacing end portions of the third dielectric structure along the lateral direction with a second conductor structure and third conductor structure, respectively.