Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Hoon CHOI, Ja Eung KOO, Il Young YOON
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Abstract
There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device includes comprising a gate structure including a gate electrode and a gate capping pattern on an upper surface of the gate electrode; a source/drain pattern on at least one side of the gate structure; and a source/drain contact on and connected with an upper surface of the source/drain pattern, the source/drain contact extending along a sidewall of the gate electrode, wherein an upper surface of the source/drain contact includes a convex curved surface.
Claims21
A semiconductor device comprising:
- a gate structure including a gate electrode and a gate capping pattern on an upper surface of the gate electrode;
- a source/drain pattern on at least one side of the gate structure;
- and
- a source/drain contact on and connected with an upper surface of the source/drain pattern, the source/drain contact extending along a sidewall of the gate electrode,
- wherein an upper surface of the source/drain contact includes a convex curved surface.
(canceled)
A semiconductor device comprising:
- a gate structure including a gate electrode and a gate capping pattern on an upper surface of the gate electrode;
- a source/drain pattern on at least one side of the gate structure;
- and
- a source/drain contact on and connected with an upper surface of the source/drain pattern,
- wherein at least a portion of the source/drain contact protrudes above an upper surface of the gate capping pattern, and
- the upper surface of the gate capping pattern includes a concave curved surface.
A semiconductor device comprising:
- an active pattern including a lower pattern and a sheet pattern on the lower pattern;
- a gate structure on the active pattern, the gate structure including a gate electrode and a gate capping pattern, the gate electrode surrounding the sheet pattern, and the gate capping pattern on an upper surface of the gate electrode;
- a source/drain pattern on at least one side of the gate structure;
- a source/drain contact on and connected with an upper surface of the source/drain pattern;
- and
- a gate contact passing through the gate capping pattern and connecting with the gate electrode,
- wherein a portion of the source/drain contact and a portion of the gate contact protrude above an upper surface of the gate capping pattern, and
- an upper surface of the source/drain contact includes a convex curved surface.
Dependencies are inferred from the claim text.