Heat-assisted magnetic recording (hamr) media with magnesium trapping layer

A heat-assisted magnetic recording (HAMR) medium, the HMR medium comprising:

• a substrate;
• a seed layer on the substrate and comprising MgO;
• a magnetic recording layer on the seed layer;
• and
• a Mg trapping layer on the substrate and configured to mitigate Mg migration from the seed layer to a surface of the HAMR medium above the magnetic recording layer,
• wherein the Mg trapping layer comprises a first compound having a first bond dissociation energy that is lower than a second bond dissociation energy of SiO2, and
• the first compound comprises less than 90 atomic percent of Mg.

A method for manufacturing a heat-assisted magnetic recording (HAMR) medium, the method comprising:

• providing a substrate;
• providing a seed layer on the substrate, the seed layer comprising MgO;
• providing a magnetic recording layer on the seed layer;
• and
• providing a Mg trapping layer on the substrate, the Mg trapping layer configured to mitigate Mg migration from the seed layer to a surface of the HAMR medium above the magnetic recording layer,
• wherein the Mg trapping layer is in direct contact with the magnetic recording layer and the seed layer, and
• wherein the Mg trapping layer comprises an oxide selected from the group consisting of TiO, TiO2, SiO, BaO, HfO, ZrO, MgTiO, MgTiO2, MgSiO, MgBaO, MgHfO, MgZrO, and combinations thereof.

A method for manufacturing a heat-assisted magnetic recording (HAMR) medium, the method comprising:

• providing a substrate;
• providing a seed layer on the substrate, the seed layer comprising MgO;
• providing a magnetic recording layer on the seed layer;
• and
• providing a Mg trapping layer on the substrate, the Mg trapping layer configured to mitigate Mg migration from the seed layer to a surface of the HAMR medium above the magnetic recording layer,
• wherin the Mg trapping layer comprises a first compound having a first bond dissociation energy that is lower than a second bond dissociation energy of SiO2, and
• the first compound comprises less than 90 percent of Mg.