Back to results
US 2022/0351952 A1Published application
A magnetron plasma sputtering arrangement
AssigneeDanmarks Tekniske Universitet
InventorEugen STAMATE
Life of this patent
Estimating the term…
Abstract
A magnetron plasma sputtering arrangement including an evacuable chamber, wherein in the evacuable chamber a tuning electrode, operatively connected to a biasing source with respect to ground, and including an aperture defining at least one axis of length, is arranged in a flow path for plasma between a sputtering head and a substrate. A plasma sputtered material originating at a sputtering target will traverse the aperture before depositing onto the surface of the substrate as a thin film.
Claims14
A magnetron plasma sputtering arrangement comprising:
- an evacuable chamber operatively coupled to a pumping system for generating a vacuum and a pressure and gas flow control;
- a sputtering head arranged, in the evacuable chamber, wherein the sputtering head comprises:
- a grounded anode;
- and
- a sputtering cathode comprising:
- a sputtering target;
- and
- magnets for enhancing a plasma produced at the sputtering target, the sputtering target operatively connected to an RF power supply for producing a plasma at the sputtering target and releasing plasma sputtered material from a sputtering target surface;
- a substrate holder for a substrate for receiving plasma sputtered material on a surface of the substrate, thereby forming a thin film of plasma sputtered material on the surface of the substrate;
- a tuning electrode operatively connected to a biasing source with respect to ground, and
- an aperture defining at least one axis of length arranged in a flow path for plasma between the sputtering cathode and the substrate, such that a plasma sputtered material originating at the sputtering target will traverse the aperture before depositing onto the surface of the substrate as a thin film.
8 more elements
Dependencies are inferred from the claim text.