Methods and systems for preparing composite crystals
AssigneeMeishan Boya Advanced Materials Co., Ltd.
InventorsYu WANG, Tian YANG
Life of this patent
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Abstract
The present disclosure provides a method for preparing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.
Claims22
A method for preparing a composite crystal, the method being executed in a multi-chamber growth device, the multi-chamber growth device including a plurality of chambers, comprising:
- conveying and processing at least one substrate between the plurality of chambers, successively, wherein a pressure and/or a temperature of a chamber adjacent to a previous chamber are pre-adjusted to be equal or close to a pressure and/or a temperature of the previous chamber during conveying the at least one substrate between the plurality of chambers;
- and
- in one of the plurality of chambers, obtaining at least one composite crystal by growing a target crystal through vapor deposition, the at least one composite crystal including the at least one substrate and the target crystal.
(canceled)
A system for preparing a composite crystal applied to a crystal preparation process, comprising:
- at least one storage device including a set of instructions;
- and
- at least one processor in communication with the at least one storage device, wherein when executing the set of instructions, the at least one processor is configured to direct the system to perform operations including:
- conveying and processing at least one substrate between a plurality of chambers, successively, wherein a pressure and/or a temperature of a chamber adjacent to a previous chamber are pre-adjusted to be equal or close to a pressure and/or a temperature of the previous chamber during conveying the at least one substrate between the plurality of chambers;
- and
- in one of the plurality of chambers, obtaining at least one composite crystal by growing a target crystal through vapor deposition, the at least one composite crystal including the at least one substrate and the target crystal.
17-34. (canceled)
Dependencies are inferred from the claim text.