Method for microstructure modification of conducting lines

A method for microstructure modification of conducting lines, comprising:

• performing an electroplating process to deposit a metal thin film with a preferred crystallographic orientation over a surface of a substrate;
• and
• performing a heat treatment on the metal thin film, to make the metal thin film having the crystal grain sizes in a range of 5 μm to 100 μm, wherein the heat treatment is conducted at a temperature in a range of above 25 degree Celsius and below 240 degree Celsius;
• wherein the metal thin film has a plurality of crystal grains with the preferred crystallographic orientation before the heat treatment is applied to the metal thin film and less than 50% of structure surface of the metal thin film can have the (111) crystal plane preferred orientation with a nanotwinned structure.