Semiconductor structures and manufacturing methods thereof
AssigneeEnkris Semiconductor, Inc.
InventorKai Cheng
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Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof. In the manufacturing method, a P-type semiconductor layer is provided, where the P-type semiconductor layer includes a GaN-based material and an upper surface of the P-type semiconductor layer is a Ga surface. A first N-type semiconductor layer is formed on the P-type semiconductor layer, where the first N-type semiconductor layer comprises a GaN-based material. An upper surface of the first N-type semiconductor layer is an N surface. A part of the first N-type semiconductor layer is removed by wet etching to expose a part of the P-type semiconductor layer.
Claims10
A manufacturing method of a semiconductor structure, the method comprising:
- providing a P-type semiconductor layer, wherein the P-type semiconductor layer comprises a first GaN-based material and a first upper surface of the P-type semiconductor layer is a Ga surface;
- forming a first N-type semiconductor layer on the P-type semiconductor layer, wherein the first N-type semiconductor layer comprises a second GaN-based material, and a second upper surface of the first N-type semiconductor layer is an N surface;
- and
- removing a first part of the first N-type semiconductor layer by wet etching to expose a second part of the P-type semiconductor layer.
A semiconductor structure, comprising:
- a P-type semiconductor layer and a first N-type semiconductor layer distributed from bottom to top, wherein,
- the P-type semiconductor layer comprises a first GaN-based material, and a first upper surface of the P-type semiconductor layer is a Ga surface;
- the first N-type semiconductor layer comprises a second GaN-based material, and a second upper surface of the first N-type semiconductor layer is an N surface;
- and
- a part of the Ga surface of the P-type semiconductor layer is exposed.
Dependencies are inferred from the claim text.