Indium-gallium-nitride light emitting diodes with light reflecting mirrors

A semiconductor processing method comprising:

• forming a gallium-and-nitrogen-containing region on a nucleation layer on a substrate;
• planarizing the gallium-and-nitrogen-containing region to form a planar portion of the gallium-and-nitrogen-containing region;
• forming a porosified region in or on the planar portion of the gallium-and-nitrogen-containing region;
• forming an active region on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material, and is characterized by a peak light emission wavelength greater than or about 400 nm;
• and
• forming a reflection layer on the active region, wherein the reflection layer comprises a metal.

A semiconductor structure comprising:

• one or more subpixels, wherein each of the subpixels comprises:
• a gallium-and-nitrogen-containing region formed on an exposed portion of a nucleation layer;
• a porosified region formed on or in the gallium-and-nitrogen-containing region;
• an active region formed on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material;
• and
• a reflection layer formed on the active region and the gallium-and-nitrogen-containing region, wherein the reflection layer comprises a metal.