Light-emitting device and production method thereof

A light-emitting device, comprising:

• a light-emitting laminating structure which includes
• an aluminum-free layer,
• a transition layer disposed on said aluminum-free layer,
• a current-spreading layer disposed on said transition layer opposite to said aluminum-free layer,
• a first type semiconductor layer disposed on said current-spreading layer opposite to said transition layer,
• an active layer disposed on said first type semiconductor layer opposite to said current-spreading layer, and
• a second type semiconductor layer disposed on said active layer opposite to said first type semiconductor layer,
• wherein
• said current-spreading layer has aluminum, and, in said current-spreading layer, a relative content of said aluminum with respect to a composition of said current-spreading layer is fixed, and
• said transition layer has aluminum, and, in said transition layer, a relative content of said aluminum with respect to a composition of said transition layer is less than said relative content of said aluminum in said current-spreading layer.

A method for producing a light-emitting device, comprising:

• forming an ohmic contact layer;
• forming a transition layer on the ohmic contact layer;
• forming a current-spreading layer on the transition layer opposite to the ohmic contact layer;
• forming a first type semiconductor layer on the current-spreading later opposite to the transition layer;
• forming an active layer on the first type semiconductor layer opposite to the current-spreading layer;
• and
• forming a second type semiconductor layer on the active layer opposite to the first type semiconductor layer,
• wherein
• the current-spreading layer has aluminum, and, in said current-spreading layer, a relative content of the aluminum with respect to a composition of the current-spreading layer is fixed, and
• the transition layer has aluminum, and, in said transition layer, a relative content of the aluminum with respect to a composition of the transition layer is less than the relative content of the aluminum in the current-spreading layer.