Light emitting element, manufacturing method of light emitting element, and display device including light emitting element

A method of manufacturing a light emitting element, the method comprising:

• providing, on a stack substrate, a first semiconductor layer comprising a semiconductor of a first type;
• providing an active layer on the first semiconductor layer;
• and
• providing, on the active layer, a second semiconductor layer comprising a semiconductor of a second type different from the first type,
• wherein the providing of the active layer comprises:
• providing a first well layer;
• and
• providing a second well layer, at least a portion of the first well layer being between the second well layer and the second semiconductor layer,
• wherein an energy band gap of the second well layer is smaller than an energy band gap of the first well layer,
• wherein the active layer comprises a first active area comprising the first well layer, and a second active area comprising the second well layer, and
• wherein a distance between the second active area and the second semiconductor layer is equal to or greater than 0.1 times of a distance between the first semiconductor layer and the second semiconductor layer.