Semiconductor Light-Emitting Device

Abstract

The semiconductor light-emitting device includes an n-type semiconductor layer, a plurality of columnar semiconductors on the n-type semiconductor layer, a buried layer filling in a space between the columnar semiconductors, and a current suppression region suppressing a current. The columnar semiconductors has a hexagonal column and an active layer covering the hexagonal column. The hexagonal column has a hexagonal first surface and a second surface opposite to the first surface. The first surface of the columnar semiconductors faces the base layer. The second surface of the columnar semiconductors faces the current suppression region.

Dependencies are inferred from the claim text.