Single chip multi band light emitting diode and method of fabricating the same

A light emitting diode, comprising:

• an n-type nitride semiconductor layer;
• a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits;
• a sub-emission layer disposed on the V-pit generation layer and having a plurality of well layers and a plurality of capping layers;
• an active layer disposed on the sub-emission layer and having a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer;
• and
• a p-type nitride semiconductor layer disposed on the active layer,
• wherein:
• the light emitting diode is operable to emit light having at least three different peak wavelengths at a single chip level, the at least three different peak wavelengths including a first peak wavelength, a second peak wavelength, and a third peak wavelength, and
• an intensity of light at the second peak wavelength, greater than the first peak wavelength and smaller than the third peak wavelength, is greater than an intensity of light at the first peak wavelength and smaller than an intensity of light at the third peak wavelength.