Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKoichi KOKUBUN
Life of this patent
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Abstract
An optical detection portion includes a substrate of a first conductivity type, a semiconductor layer of the first conductivity type provided on the substrate, a first conductivity-type layer provided in the semiconductor layer, and a second conductivity-type layer provided on the first conductivity-type layer. The circuit portion includes a first well of a second conductivity type provided in the semiconductor layer, a second well of the first conductivity type provided in the first well, a first drain layer provided in the second well, a first source layer provided in the second well, a second drain layer provided in the first well, and a second source layer.
Claims18
A semiconductor device, comprising:
- an optical detection portion;
- and
- a circuit portion processing an electric signal output by the optical detection portion,
- the optical detection portion including
- a substrate of a first conductivity type,
- a semiconductor layer of the first conductivity type provided on the substrate and having a lower first conductivity-type impurity concentration than the substrate,
- a back electrode provided on a back surface of the substrate,
- a first conductivity-type layer provided in the semiconductor layer,
- a second conductivity-type layer provided on the first conductivity-type layer and in contact with the first conductivity-type layer, and
- a surface electrode electrically connected to the second conductivity-type layer,
- the circuit portion including
- a first well of a second conductivity type provided in the semiconductor layer,
- a second well of the first conductivity type provided in the first well,
- a first drain layer of the second conductivity type provided in the second well,
- a first source layer of the second conductivity type provided in the second well,
- a first gate insulating film provided on a surface of the second well between the first drain layer and the first source layer,
- a first gate electrode provided on the first gate insulating film,
- a second drain layer of the first conductivity type provided in the first well,
- a second source layer of the first conductivity type provided in the first well,
- a second gate insulating film provided on a surface of the first well between the second drain layer and the second source layer, and
- a second gate electrode provided on the second gate insulating film.
A semiconductor device, comprising:
- an optical detection portion;
- and
- a circuit portion processing an electric signal output by the optical detection portion,
- the optical detection portion including
- a substrate of a first conductivity type,
- a semiconductor layer of a second conductivity type provided on the substrate,
- a back electrode provided on a back surface of the substrate,
- a first conductivity-type layer provided in the semiconductor layer,
- a second conductivity-type layer provided on the first conductivity-type layer and in contact with the first conductivity-type layer, and
- a surface electrode electrically connected to the second conductivity-type layer,
- the circuit portion including
- a first well of a first conductivity type provided in the semiconductor layer,
- a second well of the second conductivity type provided in the first well,
- a first drain layer of the second conductivity type provided in the first well,
- a first source layer of the second conductivity type provided in the first well,
- a first gate insulating film provided on a surface of the first well between the first drain layer and the first source layer,
- a first gate electrode provided on the first gate insulating film,
- a second drain layer of the first conductivity type provided in the second well,
- a second source layer of the first conductivity type provided in the second well,
- a second gate insulating film provided on a surface of the second well between the second drain layer and the second source layer, and
- a second gate electrode provided on the second gate insulating film.
Dependencies are inferred from the claim text.