Thin film stacks for group v doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks

A photovoltaic device comprising:

• a buffer layer having a first surface facing an energy side of the photovoltaic device and a second surface facing an opposing side of the photovoltaic device;
• and
• an absorber layer provided upon the second surface of the buffer layer, wherein:
• the absorber layer comprises cadmium, selenium, and tellurium,
• the absorber layer is p-type,
• the absorber layer is formed from a plurality of semiconductor layers,
• the plurality of semiconductor layers comprises a doped layer comprising cadmium selenide or cadmium telluride,
• the doped layer is doped with a group V dopant, and
• a total dosage of the group V dopant in the absorber layer is greater than 0 atomic percent and less than 0.1 atomic percent.