Method for through-hole plating

A method for plating via a through-hole in a semiconductor wafer, the method comprising:

• providing a semiconductor wafer having a top side and a bottom side, the semiconductor wafer having a plurality of solar cell stacks and comprises a substrate on the bottom side;
• providing each solar cell stack with at least two III-V subcells disposed on the substrate;
• and
• providing at least one through-hole extending from the top side to the bottom side of the semiconductor wafer with a continuous side wall, wherein the through-hole has a first edge region on the top side and a second edge region on the bottom side;
• applying an insulating layer to part of the first edge region, the side wall, and to the second edge region via a first printing process;
• and
• applying an electrically conductive layer via a second printing process to the insulating layer on the top side and part of the first edge region, to the insulating layer on the side wall, and to part of the insulating layer on the bottom side.