Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor region located on the first electrode, the first semiconductor region being of a first conductivity type;
• a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
• a third semiconductor region located selectively on the second semiconductor region, the third semiconductor region being of the first conductivity type;
• a first insulating part arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region in a second direction perpendicular to a first direction, the first direction being from the first electrode toward the first semiconductor region;
• a gate electrode located in the first insulating part, the gate electrode facing the second semiconductor region in the second direction;
• a second insulating part located on the third semiconductor region, the second insulating part not overlapping the gate electrode in the first direction, the second insulating part having tensile stress in the first direction;
• and
• a second electrode located on the second insulating part and electrically connected with the third semiconductor region.