Igbt power device

An insulated gate bipolar transistor (IGBT) power device, comprising:

• an n-type collector region and a p-type collector region, an n-type drift region located above the n-type collector region and the p-type collector region, at least two p-type body regions located at a top of the n-type drift region, wherein two p-type body regions of the at least two p-type body regions are isolated by the n-type drift region;
• and an n-type emitter region located within each p-type body region of the at least two p-type body regions;
• a gate dielectric layer located above the two p-type body regions and the n-type drift region between the two p-type body regions, an n-type floating gate located above the gate dielectric layer;
• a gate located above the gate dielectric layer and the n-type floating gate, wherein the gate covers two side walls of the n-type floating gate in a lateral direction;
• and an insulating dielectric layer between the gate and the n-type floating gate;
• a first opening located in the gate dielectric layer, wherein the n-type floating gate in contact with one p-type body region of the two p-type body regions through the first opening to form a p-n junction diode;
• and
• a second opening located in the gate dielectric layer, wherein the n-type floating gate is in contact with the other p-type body region of the two p-type body regions through the second opening to form a p-n junction diode.