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AssigneeInfineon Technologies Dresden GmbH
InventorsStefan Tegen, Alessandro Ferrara, Adrian Finney, Matthias Kroenke, Christoph Kubasch, Rolf Weis
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The disclosure relates to a semiconductor die with a transistor device, which has a channel region formed in a semiconductor body, a gate region aside the channel region, for controlling a channel formation, a drift region formed in the semiconductor body, and a field electrode in a field electrode trench, which extends from a frontside of the semiconductor body vertically into the drift region, wherein an insulating layer is formed on the frontside of the semiconductor body and a frontside metallization is formed on the insulating layer, and wherein a capacitor electrode is formed in the insulating layer, which is conductively connected to at least a portion of the field electrode.
A semiconductor die comprising a transistor device, the transistor device having:
A method of manufacturing a semiconductor die having a transistor device that includes a channel region formed in a semiconductor body, a gate region aside the channel region and configured to control a channel formation, a drift region formed in the semiconductor body, and a field electrode in a field electrode trench, wherein the field electrode trench extends from a frontside of the semiconductor body vertically into the drift region, the method comprising:
Dependencies are inferred from the claim text.