Semiconductor device

A semiconductor device, comprising:

• a fin-type pattern extending in a first direction;
• a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction;
• nanosheets surrounded by the gate electrode;
• spacers on sidewalls of the gate electrode;
• a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern;
• and
• an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure,
• wherein the gate electrode includes a seam structure between the nanosheets and the capping structure.

A semiconductor device, comprising:

• nanosheets;
• a gate electrode surrounding the nanosheets;
• spacers on sidewalls of the gate electrode;
• a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern;
• and
• an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure,
• wherein the gate electrode includes a gate insulating film, a metal film, and a filling film on the sidewalls of the spacers, and
• wherein an uppermost surface of the filling film is on a same plane as an uppermost surface of the spacers.