Transistor, ternary inverter including same, and transistor manufacturing method

A method of manufacturing a transistor, the method comprising:

• forming a gate structure on a substrate;
• forming a pair of etching regions on the substrate;
• forming a pair of constant current forming regions in the pair of etched regions, respectively;
• and
• forming a pair of source/drain regions on the pair of constant current forming regions, respectively,
• wherein the pair of etching regions are spaced apart from each other across the gate structure therebetween, and
• any one of the constant current forming regions immediately adjacent to any one of the pair of source/drain regions serving as a drain forms a constant current between the any one of the pair of source/drain region serving as the drain and the any one of the constant current forming regions.

A method of manufacturing a transistor, the method comprising:

• forming a fin structure extending in a first direction on a substrate:
• forming a gate structure extending in a second direction intersecting the first direction on the fin structure;
• and
• forming a source region and a drain region in the fin structure,
• wherein the fin structure comprises a constant current forming fin and a channel layer sequentially stacked on the substrate,
• the source region and the drain region are formed on the channel layer and are spaced apart from each other across the gate electrode therebetween, and
• the constant current forming fin forms a constant current between the drain region and the substrate and is formed through an epitaxial growth process.

A method of manufacturing a ternary inverter, the method comprising:

• forming a first well region and a second well region different from each other in a substrate;
• forming a first fin structure and a second fin structure extending in a first direction on the first well region and the second well region, respectively;
• forming a gate structure extending in a second direction intersecting the first direction on the first fin structure and the second fin structure;
• and
• forming a source region and a drain region spaced apart from each other across the gate structure therebetween in each of the first fin structure and the second fin structure,
• wherein the first fin structure and the second fin structure comprise a first constant current forming fin and a second constant current forming fin, respectively,
• the first constant current forming fin forms a constant current between the drain region and the first well region of the first fin structure and is formed through an epitaxial growth process, and
• the second constant current forming fin forms a constant current between the drain region and the second well region of the second fin structure and is formed through an epitaxial growth process.

A method of manufacturing a transistor, the method comprising:

• forming a constant current forming layer on a substrate;
• forming a channel layer on the constant current forming layer;
• forming a gate electrode on the channel layer;
• and
• forming a source region and a drain region in the channel layer,
• wherein the source region and the drain region are spaced apart from each other across the gate electrode therebetween, and
• the constant current forming layer forms a constant current between the drain region and the substrate and is formed through an epitaxial growth process.