METHOD FOR MANUFACTURING SiC SUBSTRATE
AssigneesDenso Corporation, Toyota Tsusho Corporation
InventorsMasatake NAGAYA, Tadaaki KANEKO
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Abstract
An object to be solved by the present invention is to provide a new technology for producing a SiC substrate in which strain is removed and capable of achieving a flat surface as flat as a surface that has been subjected to CMP. The present invention, which solves the above object, is a method for producing a SiC substrate, the method including an etching step of etching a SiC substrate having arithmetic average roughness (Ra) of a surface of equal to or less than 100 nm in an atmosphere containing Si element and C element.
Claims13
A method for producing a SiC substrate, the method comprising an etching step of etching a SiC substrate having arithmetic average roughness (Ra) of a surface of equal to or less than 100 nm in an atmosphere containing Si element and C element.
A method for producing a SiC substrate, the method comprising an etching step of etching a SiC substrate having arithmetic average roughness (Ra) of a surface of equal to or less than 2 nm in an atmosphere containing Si element and C element.
A method for producing a SiC substrate, the method including:
- a planarization step of planarizing a surface of a SiC substrate so that arithmetic average roughness (Ra) is equal to or less than 100 nm;
- and an etching step of etching the SiC substrate after the planarization step in an atmosphere containing Si element and C element.
A method for producing a SiC substrate, the method comprising:
- a planarization step of planarizing a surface of a SiC substrate by using an abrasive grain having an average abrasive grain size of equal to or less than 10 μm;
- and an etching step of etching the SiC substrate after the planarization step in an atmosphere containing Si element and C element.
Dependencies are inferred from the claim text.