Semiconductor structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTE-AN CHEN, MENG-HAN LIN
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Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate including a well region and an adjustment region over the well region. An isolation structure is disposed over the substrate and at least partially surrounds the well region and the adjustment region. An epitaxial layer is disposed over the adjustment region and surrounded by the isolation structure. A gate structure is disposed on the epitaxial layer. The present disclosure also provides a method for forming a semiconductor structure.
Claims20
A semiconductor structure, comprising:
- a substrate including a well region and an adjustment region over the well region;
- an isolation structure disposed over the substrate and at least partially surrounding the well region and the adjustment region;
- an epitaxial layer disposed over the adjustment region and surrounded by the isolation structure;
- and
- a gate structure disposed on the epitaxial layer, wherein the gate structure includes a gate spacer contacting the epitaxial layer.
A semiconductor structure, comprising:
- a substrate including a bulk region and a well region disposed over the bulk region;
- an isolation structure disposed over the bulk region and at least partially surrounding the well region;
- an epitaxial layer disposed over the well region and surrounded by the isolation structure;
- and
- a gate structure disposed on the epitaxial layer, wherein the gate structure includes a gate spacer contacting the epitaxial layer.
A method for fabricating a semiconductor structure, comprising:
- providing a substrate;
- forming an isolation structure to surround at least a portion of the substrate;
- performing a first implantation on the substrate to form a well region in the substrate;
- performing a second implantation on the substrate to form an adjustment region over the well region;
- growing an epitaxial layer over the adjustment region;
- and
- forming a gate structure on the epitaxial layer, wherein the forming of the gate structure includes forming a gate spacer contacting the epitaxial layer.
Dependencies are inferred from the claim text.