Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a heat transfer layer, wherein the heat transfer layer includes boron nitride;
• a channel layer disposed on the heat transfer layer, wherein the channel layer includes a low-dimensional material;
• a gate structure disposed over the channel layer;
• a gate dielectric layer disposed between the gate structure and the channel layer;
• and
• a source and a drain disposed beside the gate structure and contacting the channel layer.

A method of manufacturing a semiconductor device, comprising:

• forming a heat transfer layer over a substrate;
• forming a channel material layer on the heat transfer layer;
• forming a dielectric layer on the channel material layer;
• patterning the dielectric layer to form openings in the dielectric layer;
• forming source and drain terminals in the openings;
• and
• forming a gate structure over the dielectric layer.