US 2022/0285462 A1 · IMAGE SENSOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

Abstract

The present disclosure provides an image sensor, a manufacturing method thereof and a display device. The image sensor includes: a substrate; a first photodiode and a second photodiode located on the substrate, the first photodiode including a first electrode, a second electrode, and a first semiconductor structure located between the first electrode and the second electrode, the second photodiode including a third electrode, a fourth electrode, and a second semiconductor structure located between the third electrode and the fourth electrode, the first electrode being connected to the third electrode, the second electrode being connected to the fourth electrode; a switching thin film transistor, a source or a drain of the switching thin film transistor being connected to the second electrode or the first electrode; a capacitor connected in parallel with the first photodiode and the second photodiode for storing electrical signals when the image sensor receives light.

Claims16

Dependent claims

An image sensor, comprising:

a substrate;
a first photodiode and a second photodiode located on the substrate, the first photodiode comprising a first electrode, a second electrode, and a first semiconductor structure located between the first electrode and the second electrode, the second photodiode comprising a third electrode, a fourth electrode, and a second semiconductor structure located between the third electrode and the fourth electrode, the first electrode being connected to the third electrode, the second electrode being connected to the fourth electrode;
a switching thin film transistor, a source or a drain of the switching thin film transistor being connected to the second electrode or the first electrode;
and
a capacitor connected in parallel with the first photodiode and the second photodiode for storing electrical signals when the image sensor receives light.

2 more elements

A manufacturing method of an image sensor, comprising:

providing a substrate;
forming a first photodiode and a second photodiode on the substrate, the first photodiode comprising a first electrode, a second electrode, and a first semiconductor structure located between the first electrode and the second electrode, the second photodiode comprising a third electrode, a fourth electrode, and a second semiconductor structure located between the third electrode and the fourth electrode, the first electrode being connected to the third electrode, the second electrode being connected to the fourth electrode;
forming a switching thin film transistor on the substrate, a source or a drain of the switching thin film transistor being connected to the second electrode or the first electrode;
forming a capacitor on the substrate, the capacitor comprising a first electrode plate and a second electrode plate, the first electrode plate being connected to the first electrode, the second electrode plate being connected to the second electrode.

1 more element

Dependencies are inferred from the claim text.

Image sensor and manufacturing method thereof, and display device

Life of this patent

Image sensor and manufacturing method thereof, and display device

Life of this patent

Abstract

Claims16