Passivation scheme for image sensor substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKai-Yun Yang
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Abstract
The present disclosure relates to an integrated chip including a substrate. A photodetector is arranged within the substrate. A trench isolation structure extends into the substrate on opposite sides of the photodetector. The trench isolation structure separates the photodetector from neighboring photodetectors. A first passivation layer is between a sidewall of the substrate and a sidewall of the trench isolation structure. The first passivation layer includes hydrogenated amorphous silicon.
Claims20
An integrated chip, comprising:
- a substrate;
- a photodetector arranged within the substrate;
- a trench isolation structure extending into the substrate on opposite sides of the photodetector, wherein the trench isolation structure separates the photodetector from neighboring photodetectors;
- and
- a first passivation layer between a sidewall of the substrate and a sidewall of the trench isolation structure, wherein the first passivation layer comprises hydrogenated amorphous silicon.
An integrated chip, comprising:
- a substrate;
- a first semiconductor well within the substrate, wherein the first semiconductor well forms a photodetector within the substrate;
- a trench isolation structure extending into the first semiconductor well on opposite sides of the photodetector, wherein the trench isolation structure separates the photodetector from neighboring photodetectors;
- and
- a passivation structure between the first semiconductor well and the trench isolation structure, wherein the first semiconductor well is on a sidewall of the passivation structure, wherein the passivation structure is on a sidewall of the trench isolation structure, and wherein the passivation structure comprises hydrogenated amorphous silicon.
A method for forming an integrated chip, the method comprising:
- forming a photodetector in a substrate;
- patterning the substrate to form a trench in the substrate, wherein the trench is formed by sidewalls of the substrate, and wherein the trench surrounds the photodetector;
- depositing a first passivation layer on the sidewalls of the substrate that form the trench, the first passivation layer comprising hydrogenated amorphous silicon;
- and
- depositing a dielectric layer over the first passivation layer and in a remainder of the trench to form a trench isolation structure over the first passivation layer and surrounding the photodetector.
Dependencies are inferred from the claim text.