Isolation structure of a photoresist stripper, tft arrays and preparation method thereof
AssigneeChongqing Konka Photoelectric Technology Research Institute Co., Ltd.
InventorsLiu Chung Lee, Tzu Ping Lin
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AssigneeChongqing Konka Photoelectric Technology Research Institute Co., Ltd.
InventorsLiu Chung Lee, Tzu Ping Lin
Estimating the term…
Disclosed are an isolation structure of a photoresist stripper, a TFT array, and preparation methods thereof. The isolation structure includes a protective layer and a hardened layer arranged on the protective layer. The hardened layer is formed by plasma bombarding the protective layer with gas(es) and is configured to insulate the photoresist stripper. By forming the hardened layer on the surface of the protective layer including the organic planar layer, the hardened layer can prevent chemical agents (such as photoresist stripper) adopted in the subsequent process from getting into the protective layer, so as to keep the photoresist stripper from the protective layer, protecting the protective layer.
An isolation structure of a photoresist stripper, comprising:
A method for preparing an isolation structure of a photoresist stripper, wherein the method for preparing the isolation structure comprises the following steps:
Dependencies are inferred from the claim text.