Back to results
US 2022/0285402 A1Published application
Method of producing a semiconductor component and semiconductor component
AssigneeInfineon Technologies Dresden GmbH
InventorsDirk Meinhold, Steffen Bieselt
Life of this patent
Estimating the term…
Abstract
A method of producing a semiconductor component includes: providing a silicon-based substrate; depositing an oxide layer on the silicon-based substrate; depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate; producing an electronic component based on the polycrystalline silicon layer; and mounting a glass- or silicon-based lid on the crystalline silicon layer.
Claims16
A method of producing a semiconductor component, the method comprising:
- providing a silicon-based substrate;
- depositing an oxide layer on the silicon-based substrate;
- depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate;
- producing an electronic component based on the polycrystalline silicon layer;
- and
- mounting a glass- or silicon-based lid on the crystalline silicon layer.
3 more elements
A semiconductor component, comprising:
- a silicon-based substrate;
- an oxide layer atop the silicon-based substrate;
- an electronic component based on polycrystalline silicon;
- a crystalline silicon layer atop the silicon-based substrate and atop lateral faces of the oxide layer;
- and
- a glass- or silicon-based lid connected to the crystalline silicon layer.
3 more elements
Dependencies are inferred from the claim text.