Semiconductor memory device

A semiconductor memory device comprising:

• a substrate;
• a plurality of conductive layers that are arranged in a first direction and extend in a second direction, the first direction intersecting with a surface of the substrate, and the second direction intersecting with the first direction;
• a semiconductor layer that extends in the first direction and is opposed to the plurality of conductive layers;
• and
• n (n is an integer of 2 or more) contact electrode regions arranged in a third direction intersecting with the first direction and the second direction, wherein
• the n is not a power of 2,
• the contact electrode region includes a plurality of contact electrodes arranged in the second direction,
• a smallest power-of-2 larger than the n is assumed to be m, and
• the plurality of conductive layers include a first conductive layer and a second conductive layer that is an m-th conductive layer counted from the first conductive layer, wherein
• the plurality of contact electrodes included in the n contact electrode regions include:
• a first contact electrode connected to the first conductive layer;
• a second contact electrode connected to the second conductive layer;
• and
• a third contact electrode disposed between the first contact electrode and the second contact electrode, wherein
• the first contact electrode, the second contact electrode, and the third contact electrode are arranged in the second direction or the third direction.

A semiconductor memory device comprising:

• a substrate;
• a first conductive layer separated from the substrate in a first direction intersecting with a surface of the substrate;
• a second conductive layer disposed between the first conductive layer and the substrate;
• a third conductive layer closer to the substrate than the second conductive layer or farther from the substrate than the first conductive layer;
• a semiconductor layer that extends in the first direction and is opposed to the first conductive layer, the second conductive layer, and the third conductive layer;
• a first contact electrode that extends in the first direction and is connected to the first conductive layer;
• a second contact electrode that extends in the first direction and is connected to the second conductive layer;
• and
• a third contact electrode that extends in the first direction and is connected to the third conductive layer, wherein
• the first conductive layer, the second conductive layer, and the third conductive layer extend in a second direction intersecting with the first direction, and
• the third contact electrode is disposed between the first contact electrode and the second contact electrode in the second direction.