Memory Devices and Method of Fabricating Same

A method comprising:

• forming a control gate structure over a substrate;
• forming a first insulating layer along a first sidewall of the control gate structure;
• forming a charge storage layer over the first insulating layer;
• forming a second insulating layer over the charge storage layer;
• forming a memory gate structure along a sidewall of the control gate structure;
• removing portions of the second insulating layer and the charge storage layer;
• forming a first spacer along a sidewall of the memory gate structure, wherein the memory gate structure is between the first spacer and the control gate structure;
• after forming the first spacer, etching an upper surface of the memory gate structure;
• and
• forming a top spacer over the memory gate structure.

A method comprising:

• forming a control gate structure over a substrate, wherein the control gate structure and the substrate are separated by a gate dielectric layer;
• forming a charge storage layer over the control gate structure;
• depositing a memory gate layer over the charge storage layer;
• etching the memory gate layer to form a memory gate structure, wherein after etching a top surface of the memory gate structure is lower than a top surface of the charge storage layer;
• etching the charge storage layer to recess the top surface of the charge storage layer lower than the top surface of the memory gate structure;
• forming a first spacer along a sidewall of the memory gate structure;
• etching the memory gate structure to recess the top surface of the memory gate structure lower than the top surface of the charge storage layer;
• and
• forming a memory gate spacer over the memory gate structure, wherein the memory gate spacer is in direct contact with the memory gate structure.