Semiconductor memory device

A semiconductor memory device comprising

• a substrate that includes a first region and a second region arranged in a first direction, wherein
• the first region includes:
• a plurality of first word line layers stacked in a second direction intersecting with a surface of the substrate;
• a first semiconductor layer that extends in the second direction, the first semiconductor layer having an outer peripheral surface opposed to the plurality of first word line layers;
• and
• a first electric charge accumulating film disposed between the plurality of first word line layers and the first semiconductor layer, wherein
• the second region includes:
• a part of the plurality of first word line layers stacked in the second direction;
• a plurality of first insulating layers that are separated from the plurality of first word line layers in a third direction intersecting with the first direction and the second direction, the plurality of first insulating layers being stacked in the second direction;
• a first contact that extends in the second direction, the first contact having an outer peripheral surface opposed to the plurality of first insulating layers;
• a first conductive layer disposed between the plurality of first word line layers and the plurality of first insulating layers, the first conductive layer extending in the first direction and the second direction;
• a second insulating layer disposed between the first conductive layer and the plurality of first word line layers;
• and
• a third insulating layer disposed between the first conductive layer and the plurality of first insulating layers.