Semiconductor device and method of fabricating the same

A method for fabricating a semiconductor device, comprising:

• depositing a first bottom electrode layer over an interconnect layer, wherein the first bottom electrode layer comprises a first metal;
• depositing a second bottom electrode layer over the first bottom electrode layer, wherein the second bottom electrode layer comprises a second metal, and a standard reduction potential of the second metal is greater than a standard reduction potential of the first metal;
• depositing a ferroelectric layer over the second bottom electrode layer;
• depositing a top electrode layer over the ferroelectric layer;
• and
• removing portions of the top electrode layer, the ferroelectric layer, the second bottom electrode layer, and the first bottom electrode layer to form a memory stack, the memory stack comprising remaining portions of the top electrode layer, the ferroelectric layer, the second bottom electrode layer, and the first bottom electrode layer.

A method for fabricating a semiconductor device, comprising:

• depositing a bottom electrode layer over a substrate, wherein the bottom electrode layer comprises a bottom platinum-group metal layer;
• oxidizing a surface layer of the bottom platinum-group metal layer to form a bottom platinum-group metal oxide layer;
• depositing a ferroelectric layer over and in contact with a top surface of the bottom platinum-group metal oxide layer;
• depositing a top electrode layer over the ferroelectric layer;
• and
• removing portions of the top electrode layer, the ferroelectric layer, the bottom platinum-group metal oxide layer, and the bottom electrode layer to form a memory stack.