Wakeup free approach to improve the ferroelectricity of feram using a stressor layer

A method for forming a memory device, comprising:

• depositing a ferroelectric layer over a semiconductor substrate, wherein the ferroelectric layer comprises a first material;
• depositing a first stressor layer over the ferroelectric layer, wherein the first stressor layer comprises a second material different than the first material;
• and
• depositing a first electrode over the first stressor layer and comprising a third material different than the first material and the second material,
• wherein the first electrode, the first stressor layer, and the ferroelectric layer form a memory structure, and wherein the first stressor layer is configured to increase an orthorhombic phase in the ferroelectric layer.

A memory device comprising a memory cell, wherein the memory cell comprises:

• an electrode disposed over a semiconductor substrate;
• a ferroelectric layer vertically stacked with the electrode;
• and
• a stressor layer disposed between the electrode from the ferroelectric layer, wherein the stressor layer is configured to apply tensile stress to the ferroelectric layer.