Conductive layers with different thicknesses

A semiconductor chip, comprising:

• a memory cell, comprising:
• a first conductive line formed in a first conductive layer;
• a second conductive line formed in a second conductive layer different from the first conductive layer;
• a third conductive line formed in a third conductive layer different from the first conductive layer and the second conductive layer;
• a fourth conductive line formed in a fourth conductive layer different from the first conductive layer, the second conductive layer, and the third conductive layer;
• a first via layer between the first conductive layer and the second conductive layer,
• wherein:
• the second conductive line has a thickness which is greater than at least one of a thickness of the first conductive line and a thickness of the third conductive line;
• the first conductive line is disposed substantially along a first direction;
• the second conductive line is disposed substantially along a second direction;
• the third conductive line is disposed substantially along the first direction;
• the fourth conductive line is disposed substantially along the second direction;
• the first direction is orthogonal to the second direction;
• the first conductive line is longer than the second conductive line substantially along the first direction;
• and
• the second conductive line is longer than the first conductive line substantially along the second direction.

An array cell, comprising:

• a memory cell having a storage device, comprising:
• a first conductive line formed in a first conductive layer;
• a second conductive line formed in a second conductive layer;
• a third conductive line formed in a third conductive layer, and the third conductive line electrically coupled to a power supply node of the memory cell;
• a first via layer between the first conductive layer and the second conductive layer;
• and
• a first access switching device implemented via at least one of MOSFET and FINFET devices and arranged to selectively couple the first conductive line to the storage device in response to a signal on the second conductive line;
• wherein the first, second and third conductive layers are different from one another, wherein the first conductive layer is below the second conductive layer and the third conductive layer, wherein the second conductive layer is below the third conductive layer, and the second conductive layer has a thickness which is thicker than those of the first conductive layer and the third conductive layer,
• wherein the first conductive line is longer than the second conductive line substantially along a first direction,
• wherein the second conductive line is longer than the first conductive line substantially along a second direction orthogonal to the first direction.