Vertical contacts for semiconductor devices

A method for forming arrays of vertically stacked memory cells, having vertical contacts, comprising:

• forming a number of layers, in repeating iterations vertically to form a vertical stack on a substrate, the layers comprising:
• a first dielectric material layer, a semiconductor material layer, and a second dielectric material layer having a conductive line formed along a horizontal plane therein;
• the second dielectric material layer having multiple multi-direction horizontal conductive lines has a first portion extending in a first horizontal direction and a second portion extending in a second horizontal direction at an angle to the first horizontal direction and wherein the second portions are laterally spaced with respect to each other to allow for vertical contacts to be coupled to the second portions;
• performing a removal process in repeating vertical iterations at an area that includes at least a section of the second portion of the conductive line to form a staircase contact structure,
• forming spaced, vertical openings through the vertical stack adjacent to each of the multiple multi-direction horizontal conductive lines in the staircase contact structure;
• conformally depositing an insulating material in the spaced, vertical openings;
• and
• depositing conductive material in the spaced, vertical openings to form vertical contact to directly electrically couple the multiple multi-direction horizontal conductive lines in the staircase contact structure to a circuitry components in the substrate.

A memory device comprising:

• conductive circuitry contacts;
• a plurality of stacked horizontal conductive lines with insulating layers interposed between each of the plurality of stacked horizontal conductive lines;
• an insulating material disposed on the sidewalls of the insulating layers interposed between each of the horizontal conductive lines and on sidewalls of each of the stacked horizontal conductive lines;
• and
• a plurality of vertical contacts coupled to respective top surfaces of the plurality of stacked horizontal conductive lines to directly electrically couple the respective top surfaces to a corresponding conductive circuitry contact of the conductive circuitry contacts.