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US 2022/0285360 A1Published application
Semiconductor device having gate trench
AssigneeMicron Technology, Inc.
InventorToshiyasu Fujimoto
Life of this patent
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Abstract
Disclosed herein is a method that includes forming a gate trench in a semiconductor substrate, forming a gate insulating film on an inner wall of the gate trench, forming a gate electrode in the gate trench via the gate insulating film, ashing a top surface of the gate electrode to form a first insulating film, and for a gate cap insulating film embedded in the gate trench to cover the first insulating film.
Claims20
An apparatus comprising:
- a semiconductor substrate having a gate trench;
- a gate insulating film covering an inner wall of the gate trench;
- a gate electrode embedded in the gate trench via the gate insulating film;
- a gate cap insulating film embedded in the gate trench to cover a top surface of the gate electrode;
- and
- a first insulating film located between the top surface of the gate electrode and the gate cap insulating film, wherein the first insulating film comprises a different insulating material from the gate cap insulating film.
3 more elements
A method comprising:
- forming a gate trench in a semiconductor substrate;
- covering an inner wall of the gate trench with a gate insulating film;
- filling a lower portion of the gate trench, of which the inner wall is covered with the gate insulating film with a gate electrode;
- ashing a top surface of the gate electrode to form a first insulating film;
- and
- forming a gate cap insulating film embedded in an upper portion of the gate trench to cover the first insulating film.
3 more elements
An apparatus comprising:
- an active region;
- and
- two buried word lines extending in parallel over the active region to divide the active region into first, second and third active regions;
- wherein each of the two buried word lines comprises:
- a gate insulating film covers an inner wall of a gate trench;
- a gate electrode embedded in a lower portion of the gate trench of which the inner wall is covered with the gate insulating film;
- a gate cap insulating film filling an upper portion of the gate trench of which the inner wall is covered with the gate insulating film;
- and
- a first insulating film between the gate electrode and the gate cap insulating film, wherein the first insulating film comprises a different insulating material from the gate cap insulating film.
6 more elements
Dependencies are inferred from the claim text.